The IGBT Device

The IGBT Device
Author: B. Jayant Baliga
Publsiher: William Andrew
Total Pages: 732
Release: 2015-03-06
ISBN 10: 1455731536
ISBN 13: 9781455731534
Language: EN, FR, DE, ES & NL

The IGBT Device Book Review:

The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists. Essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors. Readers will learn the methodology for the design of IGBT chips including edge terminations, cell topologies, gate layouts, and integrated current sensors. The first book to cover applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion; written by the inventor of the device.

Insulated Gate Bipolar Transistor IGBT Theory and Design

Insulated Gate Bipolar Transistor IGBT Theory and Design
Author: Vinod Kumar Khanna
Publsiher: John Wiley & Sons
Total Pages: 648
Release: 2004-04-05
ISBN 10: 9780471660996
ISBN 13: 047166099X
Language: EN, FR, DE, ES & NL

Insulated Gate Bipolar Transistor IGBT Theory and Design Book Review:

A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.

Advanced High Voltage Power Device Concepts

Advanced High Voltage Power Device Concepts
Author: B. Jayant Baliga
Publsiher: Springer Science & Business Media
Total Pages: 568
Release: 2011-09-21
ISBN 10: 9781461402695
ISBN 13: 1461402697
Language: EN, FR, DE, ES & NL

Advanced High Voltage Power Device Concepts Book Review:

The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional simulations are provided to corroborate the analytical models and give greater insight into the device operation.

Power Devices for Efficient Energy Conversion

Power Devices for Efficient Energy Conversion
Author: Gourab Majumdar,Ikunori Takata
Publsiher: CRC Press
Total Pages: 336
Release: 2018-04-17
ISBN 10: 1351262300
ISBN 13: 9781351262309
Language: EN, FR, DE, ES & NL

Power Devices for Efficient Energy Conversion Book Review:

The growth of power electronics, centering on inverters and converters as its key system topology, has accelerated recently due to the demand for efficient power conversion. This growth has also been backed up by several evolutionary changes and breakthroughs achieved in the areas of power semiconductor device physics, process technology, and design. However, as power semiconductor technology remains a highly specialized subject, the literature on further research, development, and design in related fields is not adequate. With this in view, two specialists of power semiconductors, well known for their research and contributions to the field, compiled this book as a review volume focusing on power chip and module technologies. The prime purpose is to help researchers, academia, and engineers, engaged in areas related to power devices and power electronics, better understand the evolutionary growth of major power device components, their operating principles, design aspects, application features, and trends. The book is filled with unique topics related to power semiconductors, including tips on state-of-the-art and futuristic-oriented applications. Numerous diagrams, illustrations, and graphics are included to adequately support the content and to make the book extremely attractive as a practical and user-friendly reference book for researchers, technologists, and engineers, as well as a textbook for advanced graduate-level and postgraduate students.

Fundamentals of Power Semiconductor Devices

Fundamentals of Power Semiconductor Devices
Author: B. Jayant Baliga
Publsiher: Springer Science & Business Media
Total Pages: 1072
Release: 2008-09-05
ISBN 10: 9780387473130
ISBN 13: 0387473130
Language: EN, FR, DE, ES & NL

Fundamentals of Power Semiconductor Devices Book Review:

Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.

Wide Bandgap Semiconductor Power Devices

Wide Bandgap Semiconductor Power Devices
Author: B. Jayant Baliga
Publsiher: Woodhead Publishing
Total Pages: 600
Release: 2018-09-15
ISBN 10: 9780081023068
ISBN 13: 0081023065
Language: EN, FR, DE, ES & NL

Wide Bandgap Semiconductor Power Devices Book Review:

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

Power Semiconductors

Power Semiconductors
Author: Stefan Linder
Publsiher: EPFL Press
Total Pages: 267
Release: 2006-06-02
ISBN 10: 9780824725693
ISBN 13: 0824725697
Language: EN, FR, DE, ES & NL

Power Semiconductors Book Review:

The aim of this book is to provide an overview of the various types of power semiconductor devices, to give an insight into how they function, and to explain and analyze the characteristics of the various components. All the important classes of power semiconductors are covered. Of particular interest, the author takes into account the role of plasma formation in the operation of highpower semiconductor devices.

Silicon Carbide Power Devices

Silicon Carbide Power Devices
Author: B Jayant Baliga
Publsiher: World Scientific
Total Pages: 528
Release: 2006-01-05
ISBN 10: 9814478946
ISBN 13: 9789814478946
Language: EN, FR, DE, ES & NL

Silicon Carbide Power Devices Book Review:

Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices.

Modern Power Electronic Devices

Modern Power Electronic Devices
Author: Francesco Iannuzzo
Publsiher: Energy Engineering
Total Pages: 504
Release: 2020-10
ISBN 10: 9781785619175
ISBN 13: 1785619179
Language: EN, FR, DE, ES & NL

Modern Power Electronic Devices Book Review:

Power devices are key to modern power systems, performing functions such as inverting and changing voltages, buffering and switching. Following a device-centric approach, this book covers power electronic applications, semiconductor physics, materials science, application engineering, and key technologies such as MOSFET, IGBT and WBG.

Power Electronics Semiconductor Devices

Power Electronics Semiconductor Devices
Author: Robert Perret
Publsiher: John Wiley & Sons
Total Pages: 576
Release: 2013-03-01
ISBN 10: 1118623207
ISBN 13: 9781118623206
Language: EN, FR, DE, ES & NL

Power Electronics Semiconductor Devices Book Review:

This book relates the recent developments in several key electrical engineering R&D labs, concentrating on power electronics switches and their use. The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations. The next section examines silicon carbide and its potentiality for power electronics applications and its present limitations. Then, a dedicated section presents the capacitors, key passive components in power electronics, followed by a modeling method allowing the stray inductances computation, necessary for the precise simulation of switching waveforms. Thermal behavior associated with power switches follows, and the last part proposes some interesting prospectives associated to Power Electronics integration.

Disruptive Wide Bandgap Semiconductors Related Technologies and Their Applications

Disruptive Wide Bandgap Semiconductors  Related Technologies  and Their Applications
Author: Yogesh Kumar Sharma
Publsiher: BoD – Books on Demand
Total Pages: 152
Release: 2018-09-12
ISBN 10: 1789236681
ISBN 13: 9781789236682
Language: EN, FR, DE, ES & NL

Disruptive Wide Bandgap Semiconductors Related Technologies and Their Applications Book Review:

SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have already been impacting different areas with their ability to outperform Si devices. Some of the examples are the telecommunications, automotive/locomotive, power, and renewable energy industries. To achieve the carbon emission targets set by different countries, it is inevitable to use these new technologies. This book attempts to cover all the important facets related to wide bandgap semiconductor technology, including new challenges posed by it. This book is intended for graduate students, researchers, engineers, and technology experts who have been working in the exciting fields of SiC and GaN power devices.

Semiconductor Devices

Semiconductor Devices
Author: James Fiore
Publsiher: Unknown
Total Pages: 407
Release: 2017-05-11
ISBN 10: 9781796543537
ISBN 13: 1796543535
Language: EN, FR, DE, ES & NL

Semiconductor Devices Book Review:

Across 15 chapters, Semiconductor Devices covers the theory and application of discrete semiconductor devices including various types of diodes, bipolar junction transistors, JFETs, MOSFETs and IGBTs. Applications include rectifying, clipping, clamping, switching, small signal amplifiers and followers, and class A, B and D power amplifiers. Focusing on practical aspects of analysis and design, interpretations of device data sheets are integrated throughout the chapters. Computer simulations of circuit responses are included as well. Each chapter features a set of learning objectives, numerous sample problems, and a variety of exercises designed to hone and test circuit design and analysis skills. A companion laboratory manual is available. This is the print version of the on-line OER.

Japanese Journal of Applied Physics

Japanese Journal of Applied Physics
Author: Anonim
Publsiher: Unknown
Total Pages: 329
Release: 2007
ISBN 10:
ISBN 13: UCSC:32106018630944
Language: EN, FR, DE, ES & NL

Japanese Journal of Applied Physics Book Review:

IEEE Workshop on Computers in Power Electronics 1990

IEEE Workshop on Computers in Power Electronics  1990
Author: IEEE Power Electronics Society
Publsiher: Institute of Electrical & Electronics Engineers(IEEE)
Total Pages: 260
Release: 1990
ISBN 10:
ISBN 13: CORNELL:31924068288566
Language: EN, FR, DE, ES & NL

IEEE Workshop on Computers in Power Electronics 1990 Book Review:

Proceedings of the Fourth IEEE International Caracas Conference on Devices Circuits and Systems

Proceedings of the Fourth IEEE International Caracas Conference on Devices  Circuits  and Systems
Author: Anonim
Publsiher: Unknown
Total Pages: 610
Release: 2002
ISBN 10: 9780780373808
ISBN 13: 0780373804
Language: EN, FR, DE, ES & NL

Proceedings of the Fourth IEEE International Caracas Conference on Devices Circuits and Systems Book Review:

Semiconductor Power Devices

Semiconductor Power Devices
Author: Josef Lutz,Heinrich Schlangenotto,Uwe Scheuermann,Rik De Doncker
Publsiher: Springer
Total Pages: 714
Release: 2019-06-04
ISBN 10: 9783319890111
ISBN 13: 3319890115
Language: EN, FR, DE, ES & NL

Semiconductor Power Devices Book Review:

Halbleiter-Leistungsbauelemente sind das Kernstück der Leistungselektronik. Sie bestimmen die Leistungsfähigkeit und machen neuartige und verlustarme Schaltungen erst möglich. In dem Band wird neben den Halbleiter-Leistungsbauelementen selbst auch die Aufbau- und Verbindungstechnik behandelt: von den physikalischen Grundlagen und der Herstellungstechnologie über einzelne Bauelemente bis zu thermomechanischen Problemen, Zerstörungsmechanismen und Störungseffekten. Die 2., überarbeitete Auflage berücksichtigt technische Neuerungen und Entwicklungen.

PPC 2003

PPC 2003
Author: Michael Giesselmann
Publsiher: IEEE Computer Society Press
Total Pages: 1800
Release: 2003
ISBN 10: 9780780379152
ISBN 13: 0780379152
Language: EN, FR, DE, ES & NL

PPC 2003 Book Review:

"IEEE Catalog Number: 03CH37472"--T.p. verso

ISPSD 92

ISPSD  92
Author: Anonim
Publsiher: Unknown
Total Pages: 344
Release: 1992
ISBN 10: 9780780308138
ISBN 13: 0780308131
Language: EN, FR, DE, ES & NL

ISPSD 92 Book Review:

Electronic Devices on Discrete Components for Industrial and Power Engineering

Electronic Devices on Discrete Components for Industrial and Power Engineering
Author: Vladimir Gurevich
Publsiher: CRC Press
Total Pages: 432
Release: 2018-10-08
ISBN 10: 1420069837
ISBN 13: 9781420069839
Language: EN, FR, DE, ES & NL

Electronic Devices on Discrete Components for Industrial and Power Engineering Book Review:

Is it possible to design and make automatic devices for industrial and power engineering without microcircuits and microprocessors and without complex power supplies? Electronic Devices on Discrete Components for Industrial and Power Engineering answers the question above with a resounding “Yes!” by describing ten original automatic devices based exclusively on modern discrete components. The book reveals that devices based on high-voltage transistors and thyristors as well as miniature vacuum and high power gas-filled reed switches are actually much simpler to implement and more reliable than traditional devices. By identifying elementary functional modules and the basic working principles of semi-conductor devices, the text allows for the construction of complete automatic devices. It also contains an extensive reference section that includes information on modern high-voltage bipolar, FET and IGBT transistors, thyristors and triacs, as well as reed switches.

High Voltage Integrated Circuits

High Voltage Integrated Circuits
Author: B. Jayant Baliga
Publsiher: IEEE
Total Pages: 343
Release: 1988
ISBN 10:
ISBN 13: STANFORD:36105030643642
Language: EN, FR, DE, ES & NL

High Voltage Integrated Circuits Book Review:

Very Good,No Highlights or Markup,all pages are intact.