Germanium Based Technologies

Germanium Based Technologies
Author: Cor Claeys,Eddy Simoen
Publsiher: Elsevier
Total Pages: 480
Release: 2011-07-28
ISBN 10: 9780080474908
ISBN 13: 008047490X
Language: EN, FR, DE, ES & NL

Germanium Based Technologies Book Review:

Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field. The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book. State-of-the-art information available for the first time as an all-in-source Extensive reference list making it an indispensable reference book Broad coverage from fundamental aspects up to industrial applications

Metal Impurities in Silicon and Germanium Based Technologies

Metal Impurities in Silicon  and Germanium Based Technologies
Author: Cor Claeys,Eddy Simoen
Publsiher: Springer
Total Pages: 438
Release: 2018-08-13
ISBN 10: 3319939254
ISBN 13: 9783319939254
Language: EN, FR, DE, ES & NL

Metal Impurities in Silicon and Germanium Based Technologies Book Review:

This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

The Source Drain Engineering of Nanoscale Germanium based MOS Devices

The Source Drain Engineering of Nanoscale Germanium based MOS Devices
Author: Zhiqiang Li
Publsiher: Springer
Total Pages: 59
Release: 2016-03-24
ISBN 10: 3662496836
ISBN 13: 9783662496831
Language: EN, FR, DE, ES & NL

The Source Drain Engineering of Nanoscale Germanium based MOS Devices Book Review:

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600°C and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.

Advanced Material and Device Applications with Germanium

Advanced Material and Device Applications with Germanium
Author: Sanghyun Lee
Publsiher: BoD – Books on Demand
Total Pages: 100
Release: 2018-10-03
ISBN 10: 1789840317
ISBN 13: 9781789840315
Language: EN, FR, DE, ES & NL

Advanced Material and Device Applications with Germanium Book Review:

Germanium is an elemental semiconductor, which played an important role in the birth of the semiconductor but soon was replaced with silicon. However, germanium is poised to make a remarkable comeback in the semiconductor industry. With this increasing attention, this book describes the fundamental aspects of germanium and its applications. The contributing authors are experts in their field with great in-depth knowledge. The authors strongly feel that this contribution might be of interest to readers and help to expand the scope of their knowledge.

Metal Impurities in Silicon and Germanium based Technologies

Metal Impurities in Silicon  and Germanium based Technologies
Author: Cor L. Claeys,Eddy Simoen
Publsiher: Unknown
Total Pages: 135
Release: 2018
ISBN 10: 9783319939261
ISBN 13: 3319939262
Language: EN, FR, DE, ES & NL

Metal Impurities in Silicon and Germanium based Technologies Book Review:

This book gives a unique review of different aspects of metallic contaminations in Si and Ge-based semiconductors. All important metals are discussed including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on the electrical device performance. Several control and possible gettering approaches are addressed. The book is a reference for researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. It has an interdisciplinary nature by combining different disciplines such as material science, defect engineering, device processing, defect and device characterization and device physics and engineering.

Silicon Germanium and Their Alloys

Silicon  Germanium  and Their Alloys
Author: Gudrun Kissinger,Sergio Pizzini
Publsiher: CRC Press
Total Pages: 431
Release: 2014-12-09
ISBN 10: 1466586648
ISBN 13: 9781466586642
Language: EN, FR, DE, ES & NL

Silicon Germanium and Their Alloys Book Review:

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.

Silicon Germanium

Silicon Germanium
Author: Raminderpal Singh,Modest M. Oprysko,David Harame
Publsiher: John Wiley & Sons
Total Pages: 368
Release: 2004-03-15
ISBN 10: 0471660914
ISBN 13: 9780471660910
Language: EN, FR, DE, ES & NL

Silicon Germanium Book Review:

"An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications." -Ron Wilson, EETimes "SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it." -Alberto Sangiovanni-Vincentelli Professor, University of California, Berkeley Cofounder, Chief Technology Officer, Member of Board Cadence Design Systems Inc. Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning with a brief introduction to and historical perspective of IBM's SiGe technology, this comprehensive guide quickly moves on to: * Detail many of IBM's SiGe technology development programs * Explore IBM's approach to device modeling and characterization-including predictive TCAD modeling * Discuss IBM's design automation and signal integrity knowledge and implementation methodologies * Illustrate design applications in a variety of IBM's SiGe technologies * Highlight details of highly integrated SiGe BiCMOS system-on-chip (SOC) design Written for RF/analog and mixed-signal designers, CAD designers, semiconductor students, and foundry process engineers worldwide, Silicon Germanium provides detailed insight into the modeling and design automation requirements for leading-edge RF/analog and mixed-signal products, and illustrates in-depth applications that can be implemented using IBM's advanced SiGe process technologies and design kits. "This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure-the process development, device modeling, and tool development." -Ron Wilson Silicon Engineering Editor, EETimes "This book chronicles the development of SiGe in detail, provides an in-depth look at the modeling and design automation requirements for making advanced applications using SiGe possible, and illustrates such applications as implemented using IBM's process technologies and design methods." -John Kelly Senior Vice President and Group Executive, Technology Group, IBM

Silicon germanium Heterojunction Bipolar Transistors

Silicon germanium Heterojunction Bipolar Transistors
Author: John D. Cressler,Guofu Niu
Publsiher: Artech House
Total Pages: 589
Release: 2003
ISBN 10: 9781580535991
ISBN 13: 1580535992
Language: EN, FR, DE, ES & NL

Silicon germanium Heterojunction Bipolar Transistors Book Review:

This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.

Silicon Germanium SiGe Nanostructures

Silicon Germanium  SiGe  Nanostructures
Author: Y. Shiraki,N Usami
Publsiher: Elsevier
Total Pages: 656
Release: 2011-02-26
ISBN 10: 0857091425
ISBN 13: 9780857091420
Language: EN, FR, DE, ES & NL

Silicon Germanium SiGe Nanostructures Book Review:

Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices. With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. Reviews the materials science of nanostructures and their properties and applications in different electronic devices Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition

Applications of Silicon Germanium Heterostructure Devices

Applications of Silicon Germanium Heterostructure Devices
Author: C.K Maiti,G.A Armstrong
Publsiher: CRC Press
Total Pages: 402
Release: 2001-07-20
ISBN 10: 1420034693
ISBN 13: 9781420034691
Language: EN, FR, DE, ES & NL

Applications of Silicon Germanium Heterostructure Devices Book Review:

The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st

Millimeter Wave Receiver Concepts for 77 GHz Automotive Radar in Silicon Germanium Technology

Millimeter Wave Receiver Concepts for 77 GHz Automotive Radar in Silicon Germanium Technology
Author: Dietmar Kissinger
Publsiher: Springer Science & Business Media
Total Pages: 111
Release: 2012-03-09
ISBN 10: 1461422892
ISBN 13: 9781461422891
Language: EN, FR, DE, ES & NL

Millimeter Wave Receiver Concepts for 77 GHz Automotive Radar in Silicon Germanium Technology Book Review:

The book presents the analysis and design of integrated automotive radar receivers in Silicon-Germanium technology, for use in complex multi-channel radar transceiver front-ends in the 77GHz frequency band. The main emphasis of the work is the realization of high-linearity and low-power modular receiver channels as well as the investigation of millimeter-wave integrated test concepts for the receiver front-end.

Silicon Germanium Heterojunction Bipolar Transistors for mm Wave Systems Technology Modeling and Circuit Applications

Silicon Germanium Heterojunction Bipolar Transistors for mm Wave Systems  Technology  Modeling and Circuit Applications
Author: Niccolò Rinaldi,Michael Schröter
Publsiher: River Publishers
Total Pages: 378
Release: 2018-03-15
ISBN 10: 8793519613
ISBN 13: 9788793519619
Language: EN, FR, DE, ES & NL

Silicon Germanium Heterojunction Bipolar Transistors for mm Wave Systems Technology Modeling and Circuit Applications Book Review:

The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becoming an ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000's. Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration. Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.

Silicon Germanium Materials and Devices A Market and Technology Overview to 2006

Silicon Germanium Materials and Devices   A Market and Technology Overview to 2006
Author: R. Szweda
Publsiher: Elsevier
Total Pages: 418
Release: 2002-11-26
ISBN 10: 9780080541211
ISBN 13: 0080541216
Language: EN, FR, DE, ES & NL

Silicon Germanium Materials and Devices A Market and Technology Overview to 2006 Book Review:

The first edition of Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 examines the development of the silicon germanium business over a six-year period 2001 to 2006. It analyses the trends in markets, technologies and industry structure and profiles all the major players. It is specifically aimed at users and manufacturers of substrates, epiwafers, equipment and devices. The analysis includes a competitive assessment of the market of silicon germanium vs. gallium arsenide, indium phosphide vs. other forms of silicon. Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 is designed to assist with business plans, R&D and manufacturing strategies. It will be an indispensable aid for managers responsible for business development, technology assessment and market research. The report examines the rapid development of silicon germanium from an R&D curiosity to production status. An extensive treatment from materials through processes to devices and applications it encapsulates the entire silicon germanium business of today and assesses future directions. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.

Silicon Technologies

Silicon Technologies
Author: Annie Baudrant
Publsiher: John Wiley & Sons
Total Pages: 368
Release: 2013-05-10
ISBN 10: 1118601149
ISBN 13: 9781118601143
Language: EN, FR, DE, ES & NL

Silicon Technologies Book Review:

The main purpose of this book is to remind new engineers in siliconfoundry, the fundamental physical and chemical rules in major Frontend treatments: oxidation, epitaxy, ion implantation and impuritiesdiffusion.

Silicon Germanium Strained Layers and Heterostructures

Silicon Germanium Strained Layers and Heterostructures
Author: M. Willander,Suresh C. Jain
Publsiher: Elsevier
Total Pages: 322
Release: 2003-10-02
ISBN 10: 008054102X
ISBN 13: 9780080541020
Language: EN, FR, DE, ES & NL

Silicon Germanium Strained Layers and Heterostructures Book Review:

The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling. * Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review * The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject * Appropriate for students and senior researchers

Microwave Circuits for 24 GHz Automotive Radar in Silicon based Technologies

Microwave Circuits for 24 GHz Automotive Radar in Silicon based Technologies
Author: Vadim Issakov
Publsiher: Springer Science & Business Media
Total Pages: 208
Release: 2010-08-05
ISBN 10: 3642135986
ISBN 13: 9783642135989
Language: EN, FR, DE, ES & NL

Microwave Circuits for 24 GHz Automotive Radar in Silicon based Technologies Book Review:

There are continuous efforts focussed on improving road traffic safety worldwide. Numerous vehicle safety features have been invented and standardized over the past decades. Particularly interesting are the driver assistance systems, since these can considerably reduce the number of accidents by supporting drivers’ perception of their surroundings. Many driver assistance features rely on radar-based sensors. Nowadays the commercially available automotive front-end sensors are comprised of discrete components, thus making the radar modules highly-priced and suitable for integration only in premium class vehicles. Realization of low-cost radar fro- end circuits would enable their implementation in inexpensive economy cars, c- siderably contributing to traffic safety. Cost reduction requires high-level integration of the microwave front-end c- cuitry, specifically analog and digital circuit blocks co-located on a single chip. - cent developments of silicon-based technologies, e.g. CMOS and SiGe:C bipolar, make them suitable for realization of microwave sensors. Additionally, these te- nologies offer the necessary integration capability. However, the required output power and temperature stability, necessary for automotive radar sensor products, have not yet been achieved in standard digital CMOS technologies. On the other hand, SiGe bipolar technology offers excellent high-frequency characteristics and necessary output power for automotive applications, but has lower potential for - alization of digital blocks than CMOS.

Physical Chemistry of Semiconductor Materials and Processes

Physical Chemistry of Semiconductor Materials and Processes
Author: Sergio Pizzini
Publsiher: John Wiley & Sons
Total Pages: 440
Release: 2015-10-26
ISBN 10: 1118514572
ISBN 13: 9781118514573
Language: EN, FR, DE, ES & NL

Physical Chemistry of Semiconductor Materials and Processes Book Review:

The development of semiconductor devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live. The aim of this book is threefold: to present the background physical chemistry on which the technology of solid state devices is based; secondly, to describe specific issues such as the role of defects on the properties of solids, and the crucial influence of surface properties; and ultimately, to look at the physics and chemistry of growth processes, both at the bulk and thin–film level, together with some issues relating to the properties of nano–devices. Divided into five chapters, it covers: Thermodynamics of solids, including phases and their properties and structural order Point defects in semiconductors Extended defects in semiconductors and their interactions with point defects and impurities Growth of semiconductor materials Physical chemistry of semiconductor materials processing With applications across all solid state technologies,the book is useful for advanced students and researchers in materials science, physics, chemistry, electrical and electronic engineering. It is also useful for those in the semiconductor industry.

Simiconductor Wafer Bonding 9

Simiconductor Wafer Bonding 9
Author: Helmut Baumgart
Publsiher: The Electrochemical Society
Total Pages: 386
Release: 2006-01-01
ISBN 10: 156677506X
ISBN 13: 9781566775069
Language: EN, FR, DE, ES & NL

Simiconductor Wafer Bonding 9 Book Review:

This issue of ECS Transactions covers state-of-the-art R&D results of the last 1.5 years in the field of semiconductor wafer bonding technology. Wafer Bonding Technology can be used to create novel composite materials systems and devices what would otherwise be unattainable. Wafer bonding today is rapidly expanding applications in such diverse fields as photonics, sensors, MEMS, X-ray optics, non-electronic microstructures, high performance CMOS platforms for high end servers, Si-Ge, strained SOI, Germanium-on-Insulator (GeOI), and Nanotechnologies.

Strained Silicon Heterostructures

Strained Silicon Heterostructures
Author: C. K. Maiti,N. B. Chakrabarti,S. K. Ray,Institution of Electrical Engineers
Publsiher: IET
Total Pages: 496
Release: 2001
ISBN 10: 9780852967782
ISBN 13: 0852967780
Language: EN, FR, DE, ES & NL

Strained Silicon Heterostructures Book Review:

In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques have given rise to a new area of research of bandgap engineering in silicon based materials. This development has paved the way for heterojunction bipolar and field effect transistors, as well as for novel quantum devices. This title provides a comprehensive introduction to silicon heterostructures, including growth and characterization of materials and descriptions of new heterostructure devices, making it a useful reference for postgraduate students, researchers and scientists.

Epitaxial Growth of Nitrides on Germanium

Epitaxial Growth of Nitrides on Germanium
Author: Ruben Lieten
Publsiher: ASP / VUBPRESS / UPA
Total Pages: 162
Release: 2009-09-01
ISBN 10: 9054874856
ISBN 13: 9789054874850
Language: EN, FR, DE, ES & NL

Epitaxial Growth of Nitrides on Germanium Book Review:

A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements.