Ferroelectricity in Doped Hafnium Oxide

Ferroelectricity in Doped Hafnium Oxide
Author: Uwe Schroeder,Cheol Seong Hwang,Hiroshi Funakubo
Publsiher: Woodhead Publishing
Total Pages: 570
Release: 2019-03-27
ISBN 10: 0081024312
ISBN 13: 9780081024317
Language: EN, FR, DE, ES & NL

Ferroelectricity in Doped Hafnium Oxide Book Review:

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face

Negative Capacitance in Ferroelectric Materials

Negative Capacitance in Ferroelectric Materials
Author: Michael Hoffmann
Publsiher: BoD – Books on Demand
Total Pages: 170
Release: 2020-09-15
ISBN 10: 3751999361
ISBN 13: 9783751999366
Language: EN, FR, DE, ES & NL

Negative Capacitance in Ferroelectric Materials Book Review:

This dissertation investigates the phenomenon of negative capacitance in ferroelectric materials, which is promising for overcoming the fundamental limits of energy efficiency in electronics. The focus of this dissertation is on negative capacitance in hafnium oxide based ferroelectrics and the impact of ferroelectric domain formation.

Ferroelectric Gate Field Effect Transistor Memories

Ferroelectric Gate Field Effect Transistor Memories
Author: Byung-Eun Park,Hiroshi Ishiwara,Masanori Okuyama,Shigeki Sakai,Sung-Min Yoon
Publsiher: Springer Nature
Total Pages: 425
Release: 2020-03-23
ISBN 10: 9811512124
ISBN 13: 9789811512124
Language: EN, FR, DE, ES & NL

Ferroelectric Gate Field Effect Transistor Memories Book Review:

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Memristive Devices for Brain Inspired Computing

Memristive Devices for Brain Inspired Computing
Author: Sabina Spiga,Abu Sebastian,Damien Querlioz,Bipin Rajendran
Publsiher: Woodhead Publishing
Total Pages: 564
Release: 2020-06-12
ISBN 10: 0081027877
ISBN 13: 9780081027875
Language: EN, FR, DE, ES & NL

Memristive Devices for Brain Inspired Computing Book Review:

Memristive Devices for Brain-Inspired Computing: From Materials, Devices, and Circuits to Applications—Computational Memory, Deep Learning, and Spiking Neural Networks reviews the latest in material and devices engineering for optimizing memristive devices beyond storage applications and toward brain-inspired computing. The book provides readers with an understanding of four key concepts, including materials and device aspects with a view of current materials systems and their remaining barriers, algorithmic aspects comprising basic concepts of neuroscience as well as various computing concepts, the circuits and architectures implementing those algorithms based on memristive technologies, and target applications, including brain-inspired computing, computational memory, and deep learning. This comprehensive book is suitable for an interdisciplinary audience, including materials scientists, physicists, electrical engineers, and computer scientists. Provides readers an overview of four key concepts in this emerging research topic including materials and device aspects, algorithmic aspects, circuits and architectures and target applications Covers a broad range of applications, including brain-inspired computing, computational memory, deep learning and spiking neural networks Includes perspectives from a wide range of disciplines, including materials science, electrical engineering and computing, providing a unique interdisciplinary look at the field

Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films

Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films
Author: Ekaterina Yurchuk
Publsiher: Logos Verlag Berlin GmbH
Total Pages: 238
Release: 2015-06-30
ISBN 10: 3832540032
ISBN 13: 9783832540036
Language: EN, FR, DE, ES & NL

Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films Book Review:

Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2 thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO2-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

Ferroelectric Materials and Their Applications

Ferroelectric Materials and Their Applications
Author: Y. Xu
Publsiher: Elsevier
Total Pages: 406
Release: 2013-10-22
ISBN 10: 1483290956
ISBN 13: 9781483290959
Language: EN, FR, DE, ES & NL

Ferroelectric Materials and Their Applications Book Review:

This book presents the basic physical properties, structure, fabrication methods and applications of ferroelectric materials. These are widely used in various devices, such as piezoelectric/electrostrictive transducers and actuators, pyroelectric infrared detectors, optical integrated circuits, optical data storage, display devices, etc. The ferroelectric materials described in this book include a relatively complete list of practical and promising ferroelectric single crystals, bulk ceramics and thin films. Included are perovskite-type, lithium niobate, tungsten-bronze-type, water-soluable crystals and other inorganic materials, as well as organic ferroelectrics (polymers, liquid crystals, and composites). Basic concepts, principles and methods for the physical property characteristics of ferroelectric materials are introduced in the first two chapters for those readers new to the subject of ferroelectricity. Not only professional researchers and engineers but also students and other readers who have limited physical knowledge and an interest in ferroelectrics, will welcome this book.

Ferroic Materials for Smart Systems

Ferroic Materials for Smart Systems
Author: Jiyan Dai
Publsiher: John Wiley & Sons
Total Pages: 262
Release: 2020-02-25
ISBN 10: 3527344764
ISBN 13: 9783527344765
Language: EN, FR, DE, ES & NL

Ferroic Materials for Smart Systems Book Review:

Presents state-of-the-art knowledge?from basic insights to applications?on ferroic materials-based devices This book covers the fundamental physics, fabrication methods, and applications of ferroic materials and covers bulk, thin films, and nanomaterials. It provides a thorough overview of smart materials and systems involving the interplays among the mechanical strain, electrical polarization, magnetization, as well as heat and light. Materials presented include ferroelectric, multiferroic, piezoelectric, electrostrictive, magnetostrictive, and shape memory materials as well as their composites. The book also introduces various sensor and transducer applications, such as ultrasonic transducers, surface acoustic wave devices, microwave devices, magneto-electric devices, infrared detectors and memories. Ferroic Materials for Smart Systems: Fabrication, Devices and Applications introduces advanced measurement and testing techniques in ferroelectrics, including FeRAM and ferroelectric tunnelling based resistive switching. It also looks at ferroelectricity in emerging materials, such as 2D materials and high-k gate dielectric material HfO2. Engineering considerations for device design and fabrication are examined, as well as applications for magnetostrictive devices. Multiferroics of materials possessing both ferromagnetic and ferroelectric orders is covered, along with ferroelastic materials represented by shape memory alloy and magnetic shape memory alloys. -Brings together physics, fabrication, and applications of ferroic materials in a coherent manner -Discusses recent advances in ferroic materials technology and applications -Covers dielectric, ferroelectric, pyroelectric and piezoelectric materials -Introduces electrostrictive materials and magnetostrictive materials -Examines shape memory alloys and magneto-shape-memory alloys -Introduces devices based on the integration of ferroelectric and ferromagnetic materials such as multiferroic memory device and ME coupling device for sensor applications Ferroic Materials for Smart Systems: Fabrication, Devices and Applications will appeal to a wide variety of researchers and developers in physics, materials science and engineering.

Atomic Layer Deposition for Semiconductors

Atomic Layer Deposition for Semiconductors
Author: Cheol Seong Hwang
Publsiher: Springer Science & Business Media
Total Pages: 263
Release: 2013-10-18
ISBN 10: 146148054X
ISBN 13: 9781461480549
Language: EN, FR, DE, ES & NL

Atomic Layer Deposition for Semiconductors Book Review:

Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

Ferroelectric Thin Films

Ferroelectric Thin Films
Author: Carlos Paz de Araujo,James F. Scott,George W. Taylor
Publsiher: Taylor & Francis
Total Pages: 580
Release: 1996
ISBN 10: 9782884491891
ISBN 13: 2884491899
Language: EN, FR, DE, ES & NL

Ferroelectric Thin Films Book Review:

The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.

Ferroelectric Films

Ferroelectric Films
Author: A. S. Bhalla,K. M. Nair
Publsiher: Amer Ceramic Society
Total Pages: 469
Release: 1992
ISBN 10:
ISBN 13: UOM:39015029874396
Language: EN, FR, DE, ES & NL

Ferroelectric Films Book Review:

Advanced Materials

Advanced Materials
Author: Ivan A. Parinov,Shun-Hsyung Chang,Banh Tien Long
Publsiher: Springer Nature
Total Pages: 621
Release: 2020-06-16
ISBN 10: 3030451208
ISBN 13: 9783030451202
Language: EN, FR, DE, ES & NL

Advanced Materials Book Review:

This book presents selected peer-reviewed contributions from the 2019 International Conference on “Physics and Mechanics of New Materials and Their Applications”, PHENMA 2019 (Hanoi, Vietnam, 7–10 November, 2019), divided into four scientific themes: processing techniques, physics, mechanics, and applications of advanced materials. The book describes a broad spectrum of promising nanostructures, crystals, materials and composites with special properties. It presents nanotechnology approaches, modern environmentally friendly techniques and physical-chemical and mechanical studies of the structural-sensitive and physical–mechanical properties of materials. The obtained results are based on new achievements in material sciences and computational approaches, methods and algorithms (in particular, finite-element and finite-difference modeling) applied to the solution of different technological, mechanical and physical problems. The obtained results have a significant interest for theory, modeling and test of advanced materials. Other results are devoted to promising devices demonstrating high accuracy, longevity and new opportunities to work effectively under critical temperatures and high pressures, in aggressive media, etc. These devices demonstrate improved comparative characteristics, caused by developed materials and composites, allowing investigation of physio-mechanical processes and phenomena based on scientific and technological progress.

2018 76th Device Research Conference DRC

2018 76th Device Research Conference  DRC
Author: IEEE Staff
Publsiher: Anonim
Total Pages: 329
Release: 2018-06-24
ISBN 10: 9781538630273
ISBN 13: 1538630273
Language: EN, FR, DE, ES & NL

2018 76th Device Research Conference DRC Book Review:

The DRC brings together leading scientists, researchers, and students to share their latest discoveries in device science, technology and modeling Areas of focus include Biological Devices Emerging Electronic Device Materials (graphene, MoS2, etc ) Energy Scavenging Devices Magnetic Devices Memory Devices Modeling and Simulation of Devices Nanoscale Devices Optoelectronic and Optical DevicesOrganic and Molecular Devices Power Devices Quantum Devices Silicon, III V, and 2D Electronic Devices Spin based Devices Thin Film and Amorphous Devices Terahertz Devices Wide bandgap Devices

Perovskite Oxide for Solid Oxide Fuel Cells

Perovskite Oxide for Solid Oxide Fuel Cells
Author: Tatsumi Ishihara
Publsiher: Springer Science & Business Media
Total Pages: 302
Release: 2009-06-12
ISBN 10: 9780387777085
ISBN 13: 0387777083
Language: EN, FR, DE, ES & NL

Perovskite Oxide for Solid Oxide Fuel Cells Book Review:

Fuel cell technology is quite promising for conversion of chemical energy of hydrocarbon fuels into electricity without forming air pollutants. There are several types of fuel cells: polymer electrolyte fuel cell (PEFC), phosphoric acid fuel cell (PAFC), molten carbonate fuel cell (MCFC), solid oxide fuel cell (SOFC), and alkaline fuel cell (AFC). Among these, SOFCs are the most efficient and have various advantages such as flexibility in fuel, high reliability, simple balance of plant (BOP), and a long history. Therefore, SOFC technology is attracting much attention as a power plant and is now close to marketing as a combined heat and power generation system. From the beginning of SOFC development, many perovskite oxides have been used for SOFC components; for example, LaMnO -based oxide for the cathode and 3 LaCrO for the interconnect are the most well known materials for SOFCs. The 3 current SOFCs operate at temperatures higher than 1073 K. However, lowering the operating temperature of SOFCs is an important goal for further SOFC development. Reliability, durability, and stability of the SOFCs could be greatly improved by decreasing their operating temperature. In addition, a lower operating temperature is also beneficial for shortening the startup time and decreasing energy loss from heat radiation. For this purpose, faster oxide ion conductors are required to replace the conventional Y O -stabilized ZrO 2 3 2 electrolyte. A new class of electrolytes such as LaGaO is considered to be 3 highly useful for intermediate-temperature SOFCs.

Electroceramics

Electroceramics
Author: A. J. Moulson,J. M. Herbert
Publsiher: John Wiley & Sons
Total Pages: 576
Release: 2003-09-12
ISBN 10: 0470864974
ISBN 13: 9780470864975
Language: EN, FR, DE, ES & NL

Electroceramics Book Review:

Electroceramics, Materials, Properties, Applications, Second Edition provides a comprehensive treatment of the many aspects of ceramics and their electrical applications. The fundamentals of how electroceramics function are carefully introduced with their properties and applications also considered. Starting from elementary principles, the physical, chemical and mathematical background of the subject are discussed and wherever appropriate, a strong emphasis is placed on the relationship between microstructire and properties. The Second Edition has been fully revised and updated, building on the foundation of the earlier book to provide a concise text for all those working in the growing field of electroceramics. fully revised and updated to include the latest technological changes and developments in the field includes end of chapter problems and an extensive bibliography an Invaluable text for all Materials Science students. a useful reference for physicists, chemists and engineers involved in the area of electroceramics.

Integration of 2D Materials for Electronics Applications

Integration of 2D Materials for Electronics Applications
Author: Filippo Giannazzo,Samuel Lara Avila,Jens Eriksson,Sushant Sonde
Publsiher: MDPI
Total Pages: 264
Release: 2019-02-13
ISBN 10: 3038976067
ISBN 13: 9783038976066
Language: EN, FR, DE, ES & NL

Integration of 2D Materials for Electronics Applications Book Review:

This book is a printed edition of the Special Issue "Integration of 2D Materials for Electronics Applications" that was published in Crystals

Advances in Non volatile Memory and Storage Technology

Advances in Non volatile Memory and Storage Technology
Author: Yoshio Nishi
Publsiher: Elsevier
Total Pages: 532
Release: 2014-06-24
ISBN 10: 0857098098
ISBN 13: 9780857098092
Language: EN, FR, DE, ES & NL

Advances in Non volatile Memory and Storage Technology Book Review:

New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping, and resistive random access memory Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)

High k Gate Dielectrics for CMOS Technology

High k Gate Dielectrics for CMOS Technology
Author: Gang He,Zhaoqi Sun
Publsiher: John Wiley & Sons
Total Pages: 590
Release: 2012-08-10
ISBN 10: 3527646361
ISBN 13: 9783527646364
Language: EN, FR, DE, ES & NL

High k Gate Dielectrics for CMOS Technology Book Review:

A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.

Gallium Oxide

Gallium Oxide
Author: Masataka Higashiwaki,Shizuo Fujita
Publsiher: Springer Nature
Total Pages: 764
Release: 2020-04-23
ISBN 10: 3030371530
ISBN 13: 9783030371531
Language: EN, FR, DE, ES & NL

Gallium Oxide Book Review:

This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.

6th Forum on New Materials

6th Forum on New Materials
Author: Pietro Vincenzini
Publsiher: Trans Tech Publications Ltd
Total Pages: 220
Release: 2014-10-31
ISBN 10: 3038266922
ISBN 13: 9783038266921
Language: EN, FR, DE, ES & NL

6th Forum on New Materials Book Review:

Collection of selected, peer reviewed papers from the 6th Forum on New Materials, part of CIMTEC 2014-13th International Ceramics Congress and 6th Forum on New Materials, June 15-19, 2014, Montecatini Terme, Italy. The 32 papers are grouped as follows: Chapter 1: Novel Functional Carbon Nanomaterials, Chapter 2: Transport in Inorganic Materials, Chapter 3: Non-Volatile Inorganic Memory Devices, Chapter 4: Novel Superconducting Materials.

Ferroelectric Random Access Memories

Ferroelectric Random Access Memories
Author: Hiroshi Ishiwara,Masanori Okuyama,Yoshihiro Arimoto
Publsiher: Springer Science & Business Media
Total Pages: 290
Release: 2004-04-16
ISBN 10: 9783540407188
ISBN 13: 3540407189
Language: EN, FR, DE, ES & NL

Ferroelectric Random Access Memories Book Review:

The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well.