CdTe and Related Compounds Physics Defects Hetero and Nano structures Crystal Growth Surfaces and Applications

CdTe and Related Compounds  Physics  Defects  Hetero  and Nano structures  Crystal Growth  Surfaces and Applications
Author: Anonim
Publsiher: Elsevier
Total Pages: 296
Release: 2009-11-11
ISBN 10: 9780080965147
ISBN 13: 0080965148
Language: EN, FR, DE, ES & NL

CdTe and Related Compounds Physics Defects Hetero and Nano structures Crystal Growth Surfaces and Applications Book Review:

Almost thirty years after the remarkable monograph of K. Zanio and the numerous conferences and articles dedicated since that time to CdTe and CdZnTe, after all the significant progresses in that field and the increasing interest in these materials for several extremely attractive industrial applications, such as nuclear detectors and solar cells, the edition of a new enriched and updated monograph dedicated to these two very topical II-VI semiconductor compounds, covering all their most prominent, modern and fundamental aspects, seemed very relevant and useful. Detailed coverage of the main topics associated with the very topical II-VI semiconductor compound CdTe and its alloy CZT Review of the CdTe recent developments Fundamental background of many topics clearly introduced and exposed

Exam Prep Flash Cards for CdTe and Related Compounds

Exam Prep Flash Cards for CdTe and Related Compounds
Author: Anonim
Publsiher: Anonim
Total Pages: 329
Release:
ISBN 10:
ISBN 13:
Language: EN, FR, DE, ES & NL

Exam Prep Flash Cards for CdTe and Related Compounds Book Review:

Electrochemistry of Metal Chalcogenides

Electrochemistry of Metal Chalcogenides
Author: Mirtat Bouroushian
Publsiher: Springer Science & Business Media
Total Pages: 358
Release: 2010-04-23
ISBN 10: 9783642039676
ISBN 13: 3642039677
Language: EN, FR, DE, ES & NL

Electrochemistry of Metal Chalcogenides Book Review:

The author provides a unified account of the electrochemical material science of metal chalcogenide (MCh) compounds and alloys with regard to their synthesis, processing and applications. Starting with the chemical fundamentals of the chalcogens and their major compounds, the initial part of the book includes a systematic description of the MCh solids on the basis of the Periodic Table in terms of their structures and key properties. This is followed by a general discussion on the electrochemistry of chalcogen species, and the principles underlying the electrochemical formation of inorganic compounds/alloys. The core of the book offers an insight into available experimental results and inferences regarding the electrochemical preparation and microstructural control of conventional and novel MCh structures. It also aims to survey their photoelectrochemistry, both from a material-oriented point of view and as connected to specific processes such as photocatalysis and solar energy conversion. Finally, the book illustrates the relevance of MCh materials to various applications of electrochemical interest such as (electro)catalysis in fuel cells, energy storage with intercalation electrodes, and ion sensing.

Properties of Narrow Gap Cadmium based Compounds

Properties of Narrow Gap Cadmium based Compounds
Author: Peter Capper
Publsiher: IET
Total Pages: 618
Release: 1994
ISBN 10: 9780852968802
ISBN 13: 0852968809
Language: EN, FR, DE, ES & NL

Properties of Narrow Gap Cadmium based Compounds Book Review:

This highly structured volume contains sections on growth and device aspects of mercury cadmium telluride (MCT).

Introduction to Crystal Growth and Characterization

Introduction to Crystal Growth and Characterization
Author: Klaus-Werner Benz,Wolfgang Neumann
Publsiher: John Wiley & Sons
Total Pages: 438
Release: 2014-07-28
ISBN 10: 3527684344
ISBN 13: 9783527684342
Language: EN, FR, DE, ES & NL

Introduction to Crystal Growth and Characterization Book Review:

This new textbook provides for the first time a comprehensive treatment of the basics of contemporary crystallography and crystal growth in a single volume. The reader will be familiarized with the concepts for the description of morphological and structural symmetry of crystals. The architecture of crystal structures of selected inorganic and molecular crystals is illustrated. The main crystallographic databases as data sources of crystal structures are described. Nucleation processes, their kinetics and main growth mechanism will be introduced in fundamentals of crystal growth. Some phase diagrams in the solid and liquid phases in correlation with the segregation of dopants are treated on a macro- and microscale. Fluid dynamic aspects with different types of convection in melts and solutions are discussed. Various growth techniques for semiconducting materials in connection with the use of external field (magnetic fields and microgravity) are described. Crystal characterization as the overall assessment of the grown crystal is treated in detail with respect to - crystal defects - crystal quality - field of application Introduction to Crystal Growth and Characterization is an ideal textbook written in a form readily accessible to undergraduate and graduate students of crystallography, physics, chemistry, materials science and engineering. It is also a valuable resource for all scientists concerned with crystal growth and materials engineering.

Advances in Solar Energy

Advances in Solar Energy
Author: [Anonymus AC01494909],Karl Wolfgang Böer
Publsiher: Anonim
Total Pages: 106
Release: 1995
ISBN 10: 9780895532534
ISBN 13: 0895532530
Language: EN, FR, DE, ES & NL

Advances in Solar Energy Book Review:

Handbook of Crystal Growth

Handbook of Crystal Growth
Author: Peter Rudolph
Publsiher: Elsevier
Total Pages: 1418
Release: 2014-11-04
ISBN 10: 0444633065
ISBN 13: 9780444633064
Language: EN, FR, DE, ES & NL

Handbook of Crystal Growth Book Review:

Vol 2A: Basic Technologies Handbook of Crystal Growth, 2nd Edition Volume IIA (Basic Technologies) presents basic growth technologies and modern crystal cutting methods. Particularly, the methodical fundamentals and development of technology in the field of bulk crystallization on both industrial and research scales are explored. After an introductory chapter on the formation of minerals, ruling historically the basic crystal formation parameters, advanced basic technologies from melt, solution, and vapour being applied for research and production of the today most important materials, like silicon, semiconductor compounds and oxides are presented in detail. The interdisciplinary and general importance of crystal growth for human live are illustrated. Vol 2B: Growth Mechanisms and Dynamics Handbook of Crystal Growth, 2nd Edition Volume IIB (Growth Mechanisms and Dynamics) deals with characteristic mechanisms and dynamics accompanying each bulk crystal growth method discussed in Volume IIA. Before the atoms or molecules pass over from a position in the fluid medium (gas, melt or solution) to their place in the crystalline face they must be transported in the fluid over macroscopic distances by diffusion, buoyancy-driven convection, surface-tension-driven convection, and forced convection (rotation, acceleration, vibration, magnetic mixing). Further, the heat of fusion and the part carried by the species on their way to the crystal by conductive and convective transport must be dissipated in the solid phase by well-organized thermal conduction and radiation to maintain a stable propagating interface. Additionally, segregation and capillary phenomena play a decisional role for chemical composition and crystal shaping, respectively. Today, the increase of high-quality crystal yield, its size enlargement and reproducibility are imperative conditions to match the strong economy. Volume 2A Presents the status and future of Czochralski and float zone growth of dislocation-free silicon Examines directional solidification of silicon ingots for photovoltaics, vertical gradient freeze of GaAs, CdTe for HF electronics and IR imaging as well as antiferromagnetic compounds and super alloys for turbine blades Focuses on growth of dielectric and conducting oxide crystals for lasers and non-linear optics Topics on hydrothermal, flux and vapour phase growth of III-nitrides, silicon carbide and diamond are explored Volume 2B Explores capillarity control of the crystal shape at the growth from the melt Highlights modeling of heat and mass transport dynamics Discusses control of convective melt processes by magnetic fields and vibration measures Includes imperative information on the segregation phenomenon and validation of compositional homogeneity Examines crystal defect generation mechanisms and their controllability Illustrates proper automation modes for ensuring constant crystal growth process Exhibits fundamentals of solution growth, gel growth of protein crystals, growth of superconductor materials and mass crystallization for food and pharmaceutical industries

Crystal Growth

Crystal Growth
Author: A. Lörinczy
Publsiher: Trans Tech Publications Ltd
Total Pages: 932
Release: 1991-01-01
ISBN 10: 3035708290
ISBN 13: 9783035708295
Language: EN, FR, DE, ES & NL

Crystal Growth Book Review:

This 2-volume set presents 12 invited state-of-the-art i papers (volume 1) and a collection of 75 contributed papers on topics of current interest (volume 2).

Scientific and Technical Aerospace Reports

Scientific and Technical Aerospace Reports
Author: Anonim
Publsiher: Anonim
Total Pages: 329
Release: 1989
ISBN 10:
ISBN 13: STANFORD:36105007168946
Language: EN, FR, DE, ES & NL

Scientific and Technical Aerospace Reports Book Review:

Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.

Semiconductors and Semimetals

Semiconductors and Semimetals
Author: Anonim
Publsiher: Academic Press
Total Pages: 374
Release: 1992-12-03
ISBN 10: 9780080864341
ISBN 13: 0080864341
Language: EN, FR, DE, ES & NL

Semiconductors and Semimetals Book Review:

Semiconductors and Semimetals

Physics and Chemistry of Mercury Cadmium Telluride and Novel IR Detector Materials

Physics and Chemistry of Mercury Cadmium Telluride and Novel IR Detector Materials
Author: Seiler,J. P. Ed. Seiler
Publsiher: American Institute of Physics
Total Pages: 289
Release: 1991
ISBN 10:
ISBN 13: UOM:39015029745562
Language: EN, FR, DE, ES & NL

Physics and Chemistry of Mercury Cadmium Telluride and Novel IR Detector Materials Book Review:

Crystal Properties and Preparation

Crystal Properties and Preparation
Author: Anonim
Publsiher: Anonim
Total Pages: 329
Release: 1991
ISBN 10:
ISBN 13: UOM:39015023311791
Language: EN, FR, DE, ES & NL

Crystal Properties and Preparation Book Review:

Key Engineering Materials II

Key Engineering Materials II
Author: Wu Fan
Publsiher: Trans Tech Publications Ltd
Total Pages: 1920
Release: 2012-03-15
ISBN 10: 303813810X
ISBN 13: 9783038138105
Language: EN, FR, DE, ES & NL

Key Engineering Materials II Book Review:

These are the proceedings of the 2nd International Conference on Key Engineering Materials (ICKEM 2012), held on 26-28th February 2012 in Singapore. The objective was to provide a forum for the discussion of new developments, recent progress and innovations in the field of key engineering materials. All aspects of design methodology were addressed and emphasis was placed on current and future challenges to research and development in both academia and industry.

Narrow gap II VI Compounds for Optoelectronic and Electromagnetic Applications

Narrow gap II VI Compounds for Optoelectronic and Electromagnetic Applications
Author: Peter Capper
Publsiher: Springer Science & Business Media
Total Pages: 592
Release: 1997-10-31
ISBN 10: 9780412715600
ISBN 13: 0412715600
Language: EN, FR, DE, ES & NL

Narrow gap II VI Compounds for Optoelectronic and Electromagnetic Applications Book Review:

The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. Cd .. Te. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest. It is probably true to say that MCT is the third most studied semiconductor after silicon and gallium arsenide. As current epitaxial layers of MCT are mainly grown on bulk CdTe family substrates these materials are included in this book, although strictly, of course, they are not 'narrow-gap'. This book is intended for readers who are either new to the field or are experienced workers in the field who need a comprehensive and up to date view of this rapidly expanding area. To satisfy the needs of the frrst group each chapter discusses the principles underlying each topic and some of the historical background before bringing the reader the most recent information available. For those currently in the field the book can be used as a collection of useful data, as a guide to the literature and as an overview of topics covering the wide range of work areas.

Encyclopedia of Materials

Encyclopedia of Materials
Author: K. H. J. Buschow
Publsiher: Anonim
Total Pages: 9913
Release: 2001
ISBN 10:
ISBN 13: UOM:39015053036433
Language: EN, FR, DE, ES & NL

Encyclopedia of Materials Book Review:

Twenty sixth Annual Report on Materials Research at Stanford University March 1 1986 February 28 1987

Twenty sixth Annual Report on Materials Research at Stanford University  March 1  1986   February 28  1987
Author: Stanford University. Center for Materials Research
Publsiher: Anonim
Total Pages: 466
Release: 1987
ISBN 10:
ISBN 13: STANFORD:36105046357575
Language: EN, FR, DE, ES & NL

Twenty sixth Annual Report on Materials Research at Stanford University March 1 1986 February 28 1987 Book Review:

Diffusion and Defect Data

Diffusion and Defect Data
Author: Anonim
Publsiher: Anonim
Total Pages: 329
Release: 1999
ISBN 10:
ISBN 13: CORNELL:31924080531282
Language: EN, FR, DE, ES & NL

Diffusion and Defect Data Book Review:

International Symposium in Space 97

International Symposium in Space  97
Author: Anonim
Publsiher: Anonim
Total Pages: 199
Release: 1997
ISBN 10:
ISBN 13: PSU:000033374116
Language: EN, FR, DE, ES & NL

International Symposium in Space 97 Book Review:

Space Technology and Applications International Forum 1998

Space Technology and Applications International Forum   1998
Author: S. El-Genk
Publsiher: Amer Inst of Physics
Total Pages: 1720
Release: 1998
ISBN 10:
ISBN 13: UCSD:31822025711938
Language: EN, FR, DE, ES & NL

Space Technology and Applications International Forum 1998 Book Review:

A set of three casebound volumes, discussing space technology and applications.

Twenty seventh Annual Report on Materials Research at Stanford University March 1 1987 December 31 1987

Twenty seventh Annual Report on Materials Research at Stanford University  March 1  1987   December 31  1987
Author: Stanford University. Center for Materials Research
Publsiher: Anonim
Total Pages: 464
Release: 1988
ISBN 10:
ISBN 13: STANFORD:36105046357583
Language: EN, FR, DE, ES & NL

Twenty seventh Annual Report on Materials Research at Stanford University March 1 1987 December 31 1987 Book Review: